GT011N03D5E
MOSFET N-CH ESD 30V 209A DFN5*6-Manufacturer: Goford Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 30 V 209A (Tc) 89W (Tc) Surface Mount 8-DFN (4.9x5.75)
Additional Information
Series: SGTRoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Digi-Reel®Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 209A (Tc) |
| Rds On (Max) @ Id, Vgs | 0.95mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-DFN (4.9x5.75) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 98 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5950 pF @ 15 V |
Request a Quote
Clients Also Buy
GT060N04K
MOSFET, N-CH, 40V,54A,TO-252
GT700P08T
P-80V, -25A,RD<72M@-10V,VTH-2V~-
GT52N10D5
N100V,RD(MAX)<7.5M@10V,RD(MAX)<1
