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GC041N65QF

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GC041N65QF

MOSFET N-CH 650V 70A TO-247

Manufacturer: Goford Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 650 V 70A (Tc) 500W (Tc) Through Hole TO-247

Additional Information

Series: SuperJunctionRoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C70A (Tc)
Rds On (Max) @ Id, Vgs43mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)500W (Tc)
Vgs(th) (Max) @ Id5V @ 250µA
Supplier Device PackageTO-247
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)650 V
Gate Charge (Qg) (Max) @ Vgs160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds7668 pF @ 400 V

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