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G7P03D2

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G7P03D2

P-30V,-7A,RD(MAX)<20.5M@-10V,VTH

Manufacturer: Goford Semiconductor

Categories: Single FETs, MOSFETs

Quality Control: Learn More

P-Channel 30 V 7A (Tc) 1.3W (Tc) Surface Mount 6-DFN (2x2)

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-WDFN Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Rds On (Max) @ Id, Vgs20.5mOhm @ 1A, 10V
FET Feature-
Power Dissipation (Max)1.3W (Tc)
Vgs(th) (Max) @ Id1.1V @ 250µA
Supplier Device Package6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1900 pF @ 15 V

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