G75P04TI
P-40V,-70A,RD(MAX)<7M@-10V,VTH-1Manufacturer: Goford Semiconductor
Categories: Single FETs, MOSFETs
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Goford Semiconductor P-Channel MOSFET, part number G75P04TI, offers a 40V drain-to-source voltage and a continuous drain current of 70A at 25°C. This TO-220 packaged component features a maximum Rds(on) of 7mOhm at 20A and 10V Vgs. Key parameters include a 106 nC gate charge and 6407 pF input capacitance. With a maximum power dissipation of 277W, it is suitable for demanding applications across automotive and industrial power management sectors. The device operates within a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 277W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 106 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6407 pF @ 20 V |
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