G75P04SI
P-40V,-11A,RD(MAX)<8M@-10V,VTH-1Manufacturer: Goford Semiconductor
Categories: Single FETs, MOSFETs
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Goford Semiconductor G75P04SI is a P-Channel MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 40V and a continuous drain current (Id) of 11A at 25°C (Tc). Its low on-resistance (Rds On) of 8mOhm at 10A and 10V gate-source voltage (Vgs) ensures efficient power handling with a maximum power dissipation of 2.5W (Tc). The operating junction temperature range is -55°C to 150°C. The G75P04SI is housed in an 8-SOIC surface mount package and is supplied on tape and reel. Its input capacitance (Ciss) is 6509pF at 20V, and gate charge (Qg) is 106nC at 10V. This MOSFET is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Rds On (Max) @ Id, Vgs | 8mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 106 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6509 pF @ 20 V |
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