G75P04KI
P-40V,-70A,RD(MAX)<6.5M@-10V,VTHManufacturer: Goford Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Goford Semiconductor P-Channel MOSFET, G75P04KI, offers a 40V drain-source voltage and a continuous drain current of 70A at 25°C (Tc). This device features a low on-resistance of 6.5mOhm maximum at 20A and 10V, with a threshold voltage (Vgs(th)) maximum of 2.5V at 250µA. Designed with a P-Channel Metal Oxide technology, it supports gate drive voltages from 4.5V to 10V, with a maximum gate-source voltage of ±20V. The G75P04KI has a maximum power dissipation of 130W (Tc) and is housed in a TO-252-3, DPAK package for surface mounting. Key parameters include a gate charge (Qg) of 106 nC at 10V and input capacitance (Ciss) of 6586 pF at 20V. This component is suitable for applications in automotive and industrial power management.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 130W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-252 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 106 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6586 pF @ 20 V |
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