G75P04FI
P-40V,-60A,RD(MAX)<7M@-10V,VTH-1Manufacturer: Goford Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Goford Semiconductor P-Channel TrenchFET® MOSFET, part number G75P04FI, offers a 40V drain-source voltage and a continuous drain current of 60A at 25°C. This through-hole component, housed in a TO-220F package, features a maximum on-resistance (Rds(on)) of 7mOhm at 10A and 10V Vgs, with a drive voltage range of 4.5V to 10V. With a power dissipation of 89W (Tc) and a junction temperature range of -55°C to 150°C, the G75P04FI is suitable for applications in power management, industrial automation, and automotive systems. Key electrical parameters include input capacitance (Ciss) of 6275pF at 20V and gate charge (Qg) of 106nC at 10V.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 89W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-220F |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 106 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6275 pF @ 20 V |
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