G75P04D5I
P-40V,-70A,RD(MAX)<6.5M@-10V,VTHManufacturer: Goford Semiconductor
Categories: Single FETs, MOSFETs
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Goford Semiconductor P-Channel MOSFET, part number G75P04D5I. This 40V device offers a continuous drain current of 70A (Tc) with a maximum power dissipation of 150W (Tc). Key electrical characteristics include a low on-resistance (Rds On) of 6.5mOhm at 20A and 10V, and a gate threshold voltage (Vgs(th)) of 2.5V (Max) at 250µA. Input capacitance (Ciss) is rated at 6414pF (Max) at 20V, with a gate charge (Qg) of 106nC at 10V. The MOSFET operates within a temperature range of -55°C to 150°C (TJ). Packaged in an 8-PowerTDFN (4.9x5.75mm) with Tape & Reel (TR) packaging, this component is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.5mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 8-DFN (4.9x5.75) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 106 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6414 pF @ 20 V |
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