G60N10T
N100V,RD(MAX)<25M@10V,RD(MAX)<30Manufacturer: Goford Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 100 V 60A (Tc) 132W (Tc) Through Hole TO-220
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 132W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | TO-220 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 146 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 5986 pF @ 50 V |
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