G5N02L
N20V, 5A, RD<18M@10V,VTH0.4V~1.0Manufacturer: Goford Semiconductor
Categories: Single FETs, MOSFETs
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The Goford Semiconductor G5N02L is an N-Channel MOSFET designed for efficient power switching applications. This component features a drain-source voltage (Vdss) of 20 V and a continuous drain current (Id) of 5 A at 25°C (Tc). Its on-resistance (Rds On) is a maximum of 18 mOhm at 4.2 A and 10 V Vgs, with a specified drive voltage range from 2.5 V to 10 V. The G5N02L offers a low threshold voltage (Vgs(th)) of 0.4 V to 1.0 V. With a maximum power dissipation of 1.25 W (Tc), it is housed in a compact SOT-23-3 surface mount package, suitable for use in industries such as consumer electronics and industrial automation. The device operates within a temperature range of -55°C to 150°C (TJ) and is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 4.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.25W (Tc) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | SOT-23-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 780 pF @ 10 V |