G33N03S
N30V,RD(MAX)<12M@10V,RD(MAX)<13MManufacturer: Goford Semiconductor
Categories: Single FETs, MOSFETs
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The Goford Semiconductor G33N03S is an N-Channel TrenchFET® series MOSFET designed for demanding applications. This surface mount component features a Drain-Source Voltage (Vdss) of 30 V and a continuous drain current capability of 13 A at 25°C (Tc). Its low on-resistance is specified at a maximum of 12 mOhm at 10V Vgs and 8A Id, with a drive voltage range of 4.5V to 10V. The device offers a maximum power dissipation of 2.5W (Tc) and a gate charge (Qg) of 13 nC at 15 V. Input capacitance (Ciss) is a maximum of 1550 pF at 15 V. Operating temperature ranges from -55°C to 150°C (TJ). Packaged in an 8-SOP (8-SOIC) case and supplied on tape and reel, this MOSFET is suitable for use in power management, automotive, and industrial control systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13A (Tc) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Tc) |
| Vgs(th) (Max) @ Id | 1.1V @ 250µA |
| Supplier Device Package | 8-SOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1550 pF @ 15 V |
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