G220P02D2
P-20V,-8A,RD(MAX)<25M@-4.5V,VTH-Manufacturer: Goford Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
P-Channel 20 V 8A (Tc) 3.5W (Tc) Surface Mount 6-DFN (2x2)
Additional Information
Series: TrenchFET®RoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.5W (Tc) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Supplier Device Package | 6-DFN (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1873 pF @ 10 V |
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