G20N03D2
N30V,RD(MAX)<24M@10V,RD(MAX)<29MManufacturer: Goford Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 30 V 9A (Tc) 1.5W (Tc) Surface Mount 6-DFN (2x2)
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 6-DFN (2x2) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 860 pF @ 30 V |
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