2002A
N190V,5A,RD<540M@10V,VTH1.0V~3.0Manufacturer: Goford Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Goford Semiconductor N-Channel MOSFET, part number 2002A, offers a 190 V drain-source breakdown voltage and a continuous drain current of 5A (Tc). This surface mount device, packaged in a SOT-23-6L, features a maximum on-resistance of 540mOhm at 1A and 10V Vgs. The gate threshold voltage ranges from 1.0V to 3.0V. Key parameters include a 16 nC gate charge at 10V Vgs and 733 pF input capacitance at 100V Vds. With a maximum power dissipation of 1.4W (Tc) and an operating temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for applications requiring efficient power switching.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 540mOhm @ 1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.4W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-23-6L |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 190 V |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 733 pF @ 100 V |
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