18N20J
N200V, 18A,RD<0.16@10V,VTH1V~3V,Manufacturer: Goford Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 200 V 18A (Tc) 65.8W (Tc) Through Hole TO-251
Additional Information
Series: TrenchFET®RoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 65.8W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | TO-251 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 17.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 836 pF @ 25 V |
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