1002
N100V,RD(MAX)<250M@10V,RD(MAX)<2Manufacturer: Goford Semiconductor
Categories: Single FETs, MOSFETs
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The Goford Semiconductor 1002 is an N-Channel MOSFET designed for surface mount applications. This component features a Drain-to-Source Voltage (Vdss) of 100V and a continuous drain current (Id) of 2A at 25°C. The Rds On is specified at a maximum of 250mOhm at 2A and 10V Vgs. Key parameters include a gate charge (Qg) of 10 nC maximum at 10V and input capacitance (Ciss) of 387 pF maximum at 10V Vds. The device is packaged in a SOT-23 (TO-236-3, SC-59) and supports an operating temperature range of -55°C to 150°C. With a maximum power dissipation of 1.3W, this MOSFET is suitable for use in various industrial and consumer electronics applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2A |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 2A, 10V |
| Power Dissipation (Max) | 1.3W |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | SOT-23 |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 387 pF @ 10 V |
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