6703
MOSFET 20V 2.9A/3A SOT23-6LManufacturer: Goford Semiconductor
Categories: FET, MOSFET Arrays
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Goford Semiconductor MOSFET array, part number 6703, is a 20V device packaged in a SOT-23-6L surface-mount configuration. This component offers a continuous drain current capability of 2.9A (Ta) and 3A (Ta), with a maximum power dissipation of 1.1W (Ta). Key electrical characteristics include a drain-to-source breakdown voltage of 20V, and typical on-resistance values of 59mOhm @ 2.5A, 2.5V and 110mOhm @ 3A, 4.5V. Input capacitance is rated at 300pF @ 10V and 405pF @ 10V. The operating temperature range is -55°C to 150°C (TJ). This MOSFET array finds application in various industrial and consumer electronics, including power management and switching circuits. The device is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W (Ta) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.9A (Ta), 3A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 10V, 405pF @ 10V |
| Rds On (Max) @ Id, Vgs | 59mOhm @ 2.5A, 2.5V, 110mOhm @ 3A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA, 1V @ 250µA |
| Supplier Device Package | SOT-23-6L |
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