G3S06504C
DIODE SIL CARB 650V 11.5A TO252Manufacturer: Global Power Technology-GPT
Categories: Single Diodes
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Diode 650 V 11.5A Surface Mount TO-252
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 181pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 11.5A |
| Supplier Device Package | TO-252 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 4 A |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
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