GD5F2GQ4UFYIGY
IC FLASH 2GBIT SPI/QUAD 8WSONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
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GigaDevice Semiconductor (HK) Limited GD5F2GQ4UFYIGY is a 2Gbit NAND Flash memory device featuring a Quad SPI interface operating at up to 120 MHz. This non-volatile memory is organized as 256M x 8 and utilizes a single-level cell (SLC) NAND technology. The device supports a supply voltage range of 2.7V to 3.6V and is housed in an 8-WSON (6x8) package with an exposed pad for enhanced thermal management. Suitable for applications requiring high-speed data storage and retrieval, this component finds use in consumer electronics, industrial automation, and automotive systems. The 8-WSON package facilitates surface mounting for efficient board assembly. Write cycle time for a page is rated at 700µs. This component operates within an ambient temperature range of -40°C to 85°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDatasheet:Download Free CAD Model:%20Limited&mpn=GD5F2GQ4UFYIGY&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tray |
| Package / Case | 8-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 2Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NAND |
| Clock Frequency | 120 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-WSON (6x8) |
| Write Cycle Time - Word, Page | 700µs |
| Memory Interface | SPI - Quad I/O |
| Memory Organization | 256M x 8 |
| Programmable | Not Verified |
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