GD5F2GQ4UEYIGR
IC FLASH 2GBIT SPI/QUAD 8WSONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
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The GigaDevice Semiconductor (HK) Limited GD5F2GQ4UEYIGR is a 2Gbit Non-Volatile FLASH memory device utilizing a Quad SPI interface. Operating at a clock frequency of 120 MHz, this component offers efficient data transfer for demanding applications. Its memory organization is 256M x 8, providing ample storage capacity. The device is housed in an 8-WSON (6x8) package, suitable for surface mount applications. Designed for reliable operation, it features an operating temperature range of -40°C to 85°C and a supply voltage range of 2.7V to 3.6V. This NAND FLASH memory is ideal for use in industrial automation, consumer electronics, and portable devices where high-speed memory access and compact form factors are critical. The write cycle time for a word/page is 700µs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:%20Limited&mpn=GD5F2GQ4UEYIGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 2Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NAND |
| Clock Frequency | 120 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-WSON (6x8) |
| Write Cycle Time - Word, Page | 700µs |
| Memory Interface | SPI - Quad I/O |
| Memory Organization | 256M x 8 |
| Programmable | Not Verified |
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