GD5F2GQ4RF9IGY
IC FLASH 2GBIT SPI/QUAD I/O 8LGAManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
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GigaDevice Semiconductor (HK) Limited's GD5F2GQ4RF9IGY is a 2Gbit Non-Volatile NAND Flash memory designed for demanding applications. This component features a high-speed SPI interface with Quad I/O capability, enabling data transfers up to 120 MHz. The memory organization is 256M x 8, providing efficient storage density. Operating within a voltage range of 1.7V to 2V, the GD5F2GQ4RF9IGY is suitable for power-sensitive designs. Its 8-LGA (6x8) package with an exposed pad facilitates robust surface mount integration. Typical applications include automotive electronics, industrial control systems, and consumer electronics where reliable, high-density flash storage is critical. The write cycle time for a word/page is 700µs, and it operates across an ambient temperature range of -40°C to 85°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:%20Limited&mpn=GD5F2GQ4RF9IGY&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tray |
| Package / Case | 8-VLGA Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 2Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.7V ~ 2V |
| Technology | FLASH - NAND |
| Clock Frequency | 120 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-LGA (6x8) |
| Write Cycle Time - Word, Page | 700µs |
| Memory Interface | SPI - Quad I/O |
| Memory Organization | 256M x 8 |
| Programmable | Not Verified |
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