GD5F1GQ4UEYIGY
IC FLASH 1GBIT SPI/QUAD 8WSONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
Quality Control: Learn More
GigaDevice Semiconductor (HK) Limited GD5F1GQ4UEYIGY is a 1Gbit NAND Flash memory device supporting SPI Quad I/O interface. This non-volatile memory component operates at a clock frequency of 120 MHz, offering an organization of 128M x 8. The GD5F1GQ4UEYIGY is housed in a compact 8-WSON (6x8) surface-mount package, featuring an exposed pad for enhanced thermal performance. Designed for a supply voltage range of 2.7V to 3.6V, it exhibits a word/page write cycle time of 700µs. This memory solution is suitable for applications in consumer electronics, industrial automation, and telecommunications equipment where reliable, high-density flash storage is required. The operating temperature range is specified from -40°C to 85°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:%20Limited&mpn=GD5F1GQ4UEYIGY&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tray |
| Package / Case | 8-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 1Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NAND |
| Clock Frequency | 120 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-WSON (6x8) |
| Write Cycle Time - Word, Page | 700µs |
| Memory Interface | SPI - Quad I/O |
| Memory Organization | 128M x 8 |
| Programmable | Not Verified |
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