GD5F1GQ4RF9IGR
IC FLASH 1GBIT SPI/QUAD I/O 8LGAManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
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GigaDevice Semiconductor (HK) Limited GD5F1GQ4RF9IGR is a 1Gbit Non-Volatile FLASH NAND memory device featuring a Quad SPI interface supporting up to 120 MHz operation. This component is organized as 128M x 8 and offers a voltage supply range of 1.7V to 2V. Manufactured with advanced FLASH NAND technology, it is packaged in an 8-LGA (6x8) with an exposed pad, suitable for surface mount applications. The GD5F1GQ4RF9IGR operates within an ambient temperature range of -40°C to 85°C, with a typical page write cycle time of 700µs. This memory solution is commonly utilized in industrial, automotive, and consumer electronics applications requiring high-density, high-speed data storage.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:%20Limited&mpn=GD5F1GQ4RF9IGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-VLGA Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 1Gbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.7V ~ 2V |
| Technology | FLASH - NAND |
| Clock Frequency | 120 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-LGA (6x8) |
| Write Cycle Time - Word, Page | 700µs |
| Memory Interface | SPI - Quad I/O |
| Memory Organization | 128M x 8 |
| Programmable | Not Verified |
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