GD25WQ80ESIGR
IC FLASH 8MBIT SPI/QUAD 8SOPManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
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GigaDevice Semiconductor (HK) Limited GD25WQ80ESIGR is an 8Mbit NOR Flash memory device, part of the GD25WQ series. This non-volatile memory features a Quad SPI interface, enabling high-speed data transfer at a clock frequency of 104 MHz with an access time of 12 ns. The memory organization is 1M x 8 bits. Designed for surface mounting, it is housed in an 8-SOIC package (8-SOP). The device operates across a voltage range of 1.65V to 3.6V and has an operating temperature range of -40°C to 85°C. Typical applications include consumer electronics, industrial systems, and communications infrastructure. Write cycle times are 120µs for word and 4ms for page operations.
Additional Information
Series: GD25WQRoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:%20Limited&mpn=GD25WQ80ESIGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.209"", 5.30mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 8Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 3.6V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 104 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-SOP |
| Write Cycle Time - Word, Page | 120µs, 4ms |
| Memory Interface | SPI - Quad I/O |
| Access Time | 12 ns |
| Memory Organization | 1M x 8 |
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