GD25WQ80EEIGR
IC FLASH 8MBIT SPI/QUAD 8USONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
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GigaDevice Semiconductor (HK) Limited GD25WQ series NOR Flash memory, part number GD25WQ80EEIGR, offers 8Mbit of non-volatile storage. This component features a Quad SPI interface for high-speed data transfer, supporting a clock frequency of 104 MHz with an access time of 12 ns. The memory is organized as 1M x 8 and utilizes SLC (Single-Level Cell) technology. Designed for surface mounting, it comes in an 8-USON (3x2) package with an exposed pad. Operating within a voltage range of 1.65V to 3.6V, this memory is suitable for applications requiring fast read and write operations. Typical industries utilizing this type of memory include industrial control, consumer electronics, and automotive systems. The write cycle time for a word is 120µs, and for a page, it is 4ms, with an operating temperature range of -40°C to 85°C.
Additional Information
Series: GD25WQRoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:%20Limited&mpn=GD25WQ80EEIGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-XFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 8Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 3.6V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 104 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-USON (3x2) |
| Write Cycle Time - Word, Page | 120µs, 4ms |
| Memory Interface | SPI - Quad I/O |
| Access Time | 12 ns |
| Memory Organization | 1M x 8 |
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