GD25WQ32EEIGR
IC FLASH 32MBIT SPI/QUAD 8USONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
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GigaDevice Semiconductor (HK) Limited's GD25WQ32EEIGR is a 32Mbit NOR FLASH memory device, part of the GD25WQ series. This non-volatile memory offers a Quad SPI interface, supporting high-speed data transfers at a 104 MHz clock frequency with an 8 ns access time. Designed for surface mount applications, it utilizes an 8-USON (3x2) package with an exposed pad. The memory is organized as 4M x 8 and operates within a voltage range of 1.65V to 3.6V. Write cycle times are specified as 120µs for word and 4ms for page operations. This component is suitable for demanding applications across industrial, automotive, and consumer electronics sectors requiring reliable, high-performance memory solutions.
Additional Information
Series: GD25WQRoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:%20Limited&mpn=GD25WQ32EEIGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-XFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 32Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 3.6V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 104 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-USON (3x2) |
| Write Cycle Time - Word, Page | 120µs, 4ms |
| Memory Interface | SPI - Quad I/O |
| Access Time | 8 ns |
| Memory Organization | 4M x 8 |
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