GD25WD80ESIGR
IC FLASH 8MBIT SPI/DUAL 8SOPManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
Quality Control: Learn More
The GigaDevice Semiconductor (HK) Limited GD25WD80ESIGR is a NOR Flash memory device with 8Mbit of storage organized as 1M x 8. This non-volatile memory utilizes a SPI Dual I/O interface and operates at a clock frequency of 104 MHz with an access time of 6 ns. The device supports a supply voltage range of 1.65V to 3.6V and features a write cycle time of 100 µs for word and 6 ms for page operations. Housed in an 8-SOP package, it is designed for surface mount applications and operates across an industrial temperature range of -40°C to 85°C. This component is commonly found in applications within the industrial, consumer electronics, and automotive sectors.
Additional Information
Series: GD25WDRoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:%20Limited&mpn=GD25WD80ESIGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.209"", 5.30mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 8Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 3.6V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 104 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-SOP |
| Grade | - |
| Write Cycle Time - Word, Page | 100µs, 6ms |
| Memory Interface | SPI - Dual I/O |
| Access Time | 6 ns |
| Memory Organization | 1M x 8 |
| Qualification | - |
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