GD25WD80EKEGR
IC FLASH 8MBIT SPI/DUAL 8USONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
Quality Control: Learn More
GigaDevice Semiconductor (HK) Limited's GD25WD80EKEGR is an 8Mbit non-volatile NOR FLASH memory component with a 1M x 8 organization. This device supports SPI - Dual I/O interfaces and operates at a clock frequency of 104 MHz, featuring a rapid 6 ns access time. The component is housed in an 8-USON (1.5x1.5) package, suitable for surface mount applications. It operates within a voltage range of 1.65V to 3.6V and a temperature range of -40°C to 125°C. Write cycle times are specified at 120µs for word and 6ms for page operations. This memory solution is well-suited for applications in consumer electronics, industrial control, and automotive systems requiring reliable, high-speed data storage.
Additional Information
Series: GD25WDRoHS Status: RoHS CompliantManufacturer Lead Time: 14 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:%20Limited&mpn=GD25WD80EKEGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-XFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 8Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Voltage - Supply | 1.65V ~ 3.6V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 104 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-USON (1.5x1.5) |
| Grade | - |
| Write Cycle Time - Word, Page | 120µs, 6ms |
| Memory Interface | SPI - Dual I/O |
| Access Time | 6 ns |
| Memory Organization | 1M x 8 |
| Qualification | - |
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