GD25WD80EEIGR
IC FLASH 8MBIT SPI/DUAL 8USONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
Quality Control: Learn More
GigaDevice Semiconductor (HK) Limited's GD25WD80EEIGR is a high-performance NOR Flash memory device. This 8Mbit component features a SPI Dual I/O interface operating at 104 MHz with a rapid 6 ns access time. The memory organization is 1M x 8, and it utilizes SLC technology. Designed for surface mount applications, it is supplied in an 8-USON (3x2) package. Key specifications include a voltage range of 1.65V to 3.6V and an operating temperature range of -40°C to 85°C. Write cycle times are 100µs for a word and 6ms for a page. This device is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: GD25WDRoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:%20Limited&mpn=GD25WD80EEIGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-XFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 8Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 3.6V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 104 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-USON (3x2) |
| Grade | - |
| Write Cycle Time - Word, Page | 100µs, 6ms |
| Memory Interface | SPI - Dual I/O |
| Access Time | 6 ns |
| Memory Organization | 1M x 8 |
| Qualification | - |
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