GD25WD40EKIGR
IC FLASH 4MBIT SPI/DUAL 8USONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
Quality Control: Learn More
The GigaDevice Semiconductor (HK) Limited GD25WD series offers a 4Mbit NOR FLASH memory solution with a dual SPI interface. This non-volatile memory component, part number GD25WD40EKIGR, operates at a clock frequency of 104 MHz with an access time of 6 ns. Featuring a 512K x 8 memory organization, it supports both single and dual I/O SPI protocols for efficient data transfer. The device is housed in a compact 8-USON (1.5x1.5) package, suitable for surface mount applications. With a supply voltage range of 1.65V to 3.6V and an operating temperature range of -40°C to 85°C, it is designed for demanding environments. Write cycle times are specified at 100µs for word and 6ms for page. This component finds application in industrial, automotive, and consumer electronics markets requiring reliable, high-performance non-volatile storage.
Additional Information
Series: GD25WDRoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:%20Limited&mpn=GD25WD40EKIGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-XFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 3.6V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 104 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-USON (1.5x1.5) |
| Write Cycle Time - Word, Page | 100µs, 6ms |
| Memory Interface | SPI - Dual I/O |
| Access Time | 6 ns |
| Memory Organization | 512K x 8 |
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