GD25WD40EK6IGR
IC FLASH 4MBIT SPI/DUAL 8USONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
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GigaDevice Semiconductor (HK) Limited's GD25WD40EK6IGR is a 4Mbit non-volatile NOR FLASH memory device. Featuring a dual I/O SPI interface, this component offers a robust solution for embedded systems requiring fast data access. The GD25WD series device operates at a clock frequency of 104 MHz with an access time of 6 ns, and supports a wide operating voltage range of 1.65V to 3.6V. Its memory organization is 512K x 8, and it utilizes SLC technology. The component is housed in an 8-USON (1.5x1.5) package, suitable for surface mounting. Typical applications for this memory IC include consumer electronics and industrial automation. The operating temperature range is -40°C to 85°C.
Additional Information
Series: GD25WDRoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:%20Limited&mpn=GD25WD40EK6IGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-XFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 3.6V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 104 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-USON (1.5x1.5) |
| Write Cycle Time - Word, Page | 100µs, 6ms |
| Memory Interface | SPI - Dual I/O |
| Access Time | 6 ns |
| Memory Organization | 512K x 8 |
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