GD25WD40EEIGR
IC FLASH 4MBIT SPI/DUAL 8USONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
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GigaDevice Semiconductor (HK) Limited presents the GD25WD40EEIGR, a 4Mbit NOR (SLC) FLASH memory device within the GD25WD series. This component offers a SPI Dual I/O interface operating at a clock frequency of 104 MHz with a rapid 6 ns access time. Its memory organization is 512K x 8, providing 4Mbit of non-volatile storage. Designed for efficient operation, it supports a voltage supply range of 1.65V to 3.6V and features write cycle times of 100µs for words and 6ms for pages. The GD25WD40EEIGR is housed in an 8-USON (3x2) package with an exposed pad, suitable for surface mounting and operating across a temperature range of -40°C to 85°C. This device finds application in various industrial and consumer electronics sectors.
Additional Information
Series: GD25WDRoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:%20Limited&mpn=GD25WD40EEIGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-XFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 3.6V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 104 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-USON (3x2) |
| Write Cycle Time - Word, Page | 100µs, 6ms |
| Memory Interface | SPI - Dual I/O |
| Access Time | 6 ns |
| Memory Organization | 512K x 8 |
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