GD25WD20ETIGR
IC FLASH 2MBIT SPI/DUAL 8SOPManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
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GigaDevice Semiconductor (HK) Limited GD25WD20ETIGR is a 2Mbit NOR Flash memory device featuring a Dual I/O SPI interface. This component operates at a clock frequency of 104 MHz with an access time of 6 ns. The memory organization is 256K x 8, and it is a non-volatile memory. The GD25WD20ETIGR supports a wide supply voltage range of 1.65V to 3.6V and operates within an ambient temperature range of -40°C to 85°C. It is housed in a compact 8-SOP package, suitable for surface mount applications. Write cycle times for word and page operations are 100µs and 6ms, respectively. This device finds application in various industries including consumer electronics, industrial automation, and telecommunications.
Additional Information
Series: GD25WDRoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:%20Limited&mpn=GD25WD20ETIGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 2Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 3.6V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 104 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-SOP |
| Write Cycle Time - Word, Page | 100µs, 6ms |
| Memory Interface | SPI - Dual I/O |
| Access Time | 6 ns |
| Memory Organization | 256K x 8 |
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