GD25WD20EKIGR
IC FLASH 2MBIT SPI/DUAL 8USONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
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GigaDevice Semiconductor (HK) Limited presents the GD25WD20EKIGR, a 2Mbit NOR Flash memory device from the GD25WD series. This component utilizes Single-Level Cell (SLC) technology and operates with a dual I/O SPI interface, achieving a clock frequency of 104 MHz and an access time of 6 ns. The memory organization is 256K x 8, with a write cycle time of 100µs for word operations and 6ms for page operations. Designed for surface mounting, it is supplied in an 8-USON (1.5x1.5) package, specifically an 8-XFDFN exposed pad configuration, and is delivered on a Tape & Reel (TR). Operating within a temperature range of -40°C to 85°C, this non-volatile memory supports supply voltages from 1.65V to 3.6V. This device is suitable for applications in consumer electronics, industrial control, and automotive systems.
Additional Information
Series: GD25WDRoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:%20Limited&mpn=GD25WD20EKIGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-XFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 2Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 3.6V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 104 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-USON (1.5x1.5) |
| Write Cycle Time - Word, Page | 100µs, 6ms |
| Memory Interface | SPI - Dual I/O |
| Access Time | 6 ns |
| Memory Organization | 256K x 8 |
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