GD25WD20EK6IGR
IC FLASH 2MBIT SPI/DUAL 8USONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
Quality Control: Learn More
GigaDevice Semiconductor (HK) Limited's GD25WD20EK6IGR is a 2Mbit NOR (SLC) FLASH memory device featuring a SPI dual I/O interface. This component operates at a clock frequency of 104 MHz with an access time of 6 ns and a supply voltage range of 1.65V to 3.6V. The memory organization is 256K x 8. It is housed in an 8-USON (1.5x1.5) package and supports surface mount technology. The operating temperature range is -40°C to 85°C. Write cycle times for word and page operations are specified at 100µs and 6ms respectively. This component is suitable for applications in consumer electronics, industrial control, and automotive systems.
Additional Information
Series: GD25WDRoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:%20Limited&mpn=GD25WD20EK6IGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-XFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 2Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 3.6V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 104 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-USON (1.5x1.5) |
| Write Cycle Time - Word, Page | 100µs, 6ms |
| Memory Interface | SPI - Dual I/O |
| Access Time | 6 ns |
| Memory Organization | 256K x 8 |
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