GD25WD20EEIGR
IC FLASH 2MBIT SPI/DUAL 8USONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
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The GigaDevice Semiconductor (HK) Limited GD25WD series NOR Flash memory, part number GD25WD20EEIGR, offers 2Mbit of non-volatile storage. This component features a SPI dual I/O interface operating at up to 104 MHz with an access time of 6 ns. The memory organization is 256K x 8, and it utilizes SLC NAND Flash technology. Designed for surface mount applications, it comes in an 8-USON (3x2) package with an exposed pad. The device supports a wide supply voltage range of 1.65V to 3.6V and operates within an industrial temperature range of -40°C to 85°C. Write cycle times for word and page operations are 100µs and 6ms, respectively. This component is suitable for embedded systems in consumer electronics and industrial control applications.
Additional Information
Series: GD25WDRoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:%20Limited&mpn=GD25WD20EEIGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-XFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 2Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 3.6V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 104 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-USON (3x2) |
| Write Cycle Time - Word, Page | 100µs, 6ms |
| Memory Interface | SPI - Dual I/O |
| Access Time | 6 ns |
| Memory Organization | 256K x 8 |
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