GD25WD10ETIGR
IC FLASH 1MBIT SPI/DUAL 8SOPManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
Quality Control: Learn More
GigaDevice Semiconductor (HK) Limited's GD25WD10ETIGR is a 1Mbit NOR FLASH memory device featuring a dual SPI interface for enhanced performance. Operating at a clock frequency of 104 MHz with an access time of 6 ns, this component offers efficient data transfer. Its memory organization is 128K x 8, utilizing SLC (Single-Level Cell) technology. The GD25WD series device operates within a voltage range of 1.65V to 3.6V and an industrial temperature range of -40°C to 85°C. Supplied in an 8-SOP package with Tape & Reel packaging, it is suitable for surface mount applications. Typical write cycle times are 150µs for word and 6ms for page operations. This memory solution finds application in various industrial, consumer electronics, and communication systems requiring reliable non-volatile storage.
Additional Information
Series: GD25WDRoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:%20Limited&mpn=GD25WD10ETIGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 1Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 3.6V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 104 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-SOP |
| Grade | - |
| Write Cycle Time - Word, Page | 150µs, 6ms |
| Memory Interface | SPI - Dual I/O |
| Access Time | 6 ns |
| Memory Organization | 128K x 8 |
| Qualification | - |
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