GD25WD10EK6IGR
IC FLASH 1MBIT SPI/DUAL 8USONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
Quality Control: Learn More
The GigaDevice Semiconductor GD25WD10EK6IGR is a 1Mbit NOR Flash memory device featuring a Dual SPI interface. This component operates at a clock frequency of 104 MHz with an access time of 6 ns, supporting efficient data transfer. The memory organization is 128K x 8, and it utilizes SLC (Single-Level Cell) Flash technology for non-volatile storage. Designed for surface mount applications, it is provided in a compact 6-USON (1.2x1.2) package, supplied on tape and reel. The operating voltage range is 1.65V to 3.6V, and it is qualified for an industrial temperature range of -40°C to 85°C. Write cycle times for word and page operations are 150µs and 6ms, respectively. This memory solution is suitable for applications in consumer electronics, industrial automation, and automotive systems demanding reliable, high-speed non-volatile storage.
Additional Information
Series: GD25WDRoHS Status: RoHS CompliantManufacturer Lead Time: 14 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:%20Limited&mpn=GD25WD10EK6IGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-XFDFN |
| Mounting Type | Surface Mount |
| Memory Size | 1Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 3.6V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 104 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 6-USON (1.2x1.2) |
| Grade | - |
| Write Cycle Time - Word, Page | 150µs, 6ms |
| Memory Interface | SPI - Dual I/O |
| Access Time | 6 ns |
| Memory Organization | 128K x 8 |
| Qualification | - |
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