GD25WD10EEIGR
IC FLASH 1MBIT SPI/DUAL 8USONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
Quality Control: Learn More
The GigaDevice Semiconductor (HK) Limited GD25WD10EEIGR is a 1Mbit NOR Flash memory device with a Serial Peripheral Interface (SPI) supporting Dual I/O. This component operates at a clock frequency of 104 MHz and offers an access time of 6 ns. Featuring a 128K x 8 memory organization, it is designed for efficient data storage and retrieval. The GD25WD series part is housed in an 8-USON (3x2) package, suitable for surface mount applications. Its non-volatile memory technology provides a supply voltage range of 1.65V to 3.6V and an operating temperature range of -40°C to 85°C. Write cycle times for word and page operations are 150µs and 6ms respectively. This device finds application in various consumer electronics, industrial control, and communication systems requiring reliable non-volatile storage.
Additional Information
Series: GD25WDRoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:%20Limited&mpn=GD25WD10EEIGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-XFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 1Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 3.6V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 104 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-USON (3x2) |
| Grade | - |
| Write Cycle Time - Word, Page | 150µs, 6ms |
| Memory Interface | SPI - Dual I/O |
| Access Time | 6 ns |
| Memory Organization | 128K x 8 |
| Qualification | - |
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