GD25WD10CKIGR
IC FLASH 1MBIT SPI/DUAL 8USONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
Quality Control: Learn More
GigaDevice Semiconductor (HK) Limited's GD25WD10CKIGR is a 1Mbit NOR FLASH memory device featuring a dual SPI interface. Operating at a clock frequency of 100 MHz with an access time of 12 ns, this non-volatile memory offers efficient data access. The memory organization is 128K x 8, and it supports both SPI and Dual I/O modes for enhanced communication. Designed for surface mount applications, it is housed in an 8-USON (1.5x1.5) package. This component operates within a voltage range of 1.65V to 3.6V and has an operating temperature range of -40°C to 85°C. Write cycle times are specified at 55µs for word and 6ms for page operations. The GD25WD10CKIGR is suitable for applications in consumer electronics, industrial control, and telecommunications. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: GD25WDRoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:%20Limited&mpn=GD25WD10CKIGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-XFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 1Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 3.6V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 100 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-USON (1.5x1.5) |
| Write Cycle Time - Word, Page | 55µs, 6ms |
| Memory Interface | SPI - Dual I/O |
| Access Time | 12 ns |
| Memory Organization | 128K x 8 |
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