GD25WD10CK6IGR
IC FLASH 1MBIT SPI/DUAL 8USONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
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The GigaDevice Semiconductor GD25WD10CK6IGR is a 1Mbit NOR FLASH memory component from the GD25WD series. This non-volatile memory utilizes a Dual I/O SPI interface, supporting clock frequencies up to 100 MHz with an access time of 12 ns. The memory organization is 128K x 8. Designed for surface mount applications, it comes in an 8-USON (1.5x1.5) package with an exposed pad, supplied on tape and reel. Operating within a voltage range of 1.65V to 3.6V, this component is suitable for applications requiring efficient data storage and retrieval. Typical industries served include industrial automation and consumer electronics. The write cycle times are 55µs for word and 6ms for page operations.
Additional Information
Series: GD25WDRoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:%20Limited&mpn=GD25WD10CK6IGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-XFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 1Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 3.6V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 100 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-USON (1.5x1.5) |
| Write Cycle Time - Word, Page | 55µs, 6ms |
| Memory Interface | SPI - Dual I/O |
| Access Time | 12 ns |
| Memory Organization | 128K x 8 |
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