GD25WD05CK6IGR
IC FLASH 512KBIT SPI/DUAL 8USONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
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The GigaDevice Semiconductor (HK) Limited GD25WD05CK6IGR is a 512Kbit NOR FLASH memory component from the GD25WD series. This non-volatile memory features a SPI (Serial Peripheral Interface) with Dual I/O capability, supporting clock frequencies up to 100 MHz and an access time of 12 ns. The memory is organized as 64K x 8 and utilizes SLC (Single-Level Cell) technology. Designed for surface mounting, it comes in an 8-USON (1.5x1.5) package, specifically an 8-XFDFN Exposed Pad, supplied on tape and reel. Operating voltage ranges from 1.65V to 3.6V, with write cycle times of 55µs for word and 6ms for page operations. This component is suitable for applications in consumer electronics, industrial automation, and communication systems requiring reliable non-volatile storage.
Additional Information
Series: GD25WDRoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:%20Limited&mpn=GD25WD05CK6IGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-XFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 512Kbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 1.65V ~ 3.6V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 100 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-USON (1.5x1.5) |
| Write Cycle Time - Word, Page | 55µs, 6ms |
| Memory Interface | SPI - Dual I/O |
| Access Time | 12 ns |
| Memory Organization | 64K x 8 |
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