GD25S512MDYIGR
IC FLASH 512MBIT SPI/QUAD 8WSONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
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GigaDevice Semiconductor (HK) Limited's GD25S512MDYIGR is a 512Mbit NOR Flash memory device. This non-volatile memory features a Quad SPI interface operating at a 104 MHz clock frequency, enabling high-speed data transfer. The memory organization is 64M x 8. Designed for efficient surface mounting, it is supplied in an 8-WSON (6x8) package and delivered on tape and reel. Operating within a voltage range of 2.7V to 3.6V, this component is suitable for applications requiring robust and fast memory solutions. It supports a word write cycle time of 50µs and a page write cycle time of 2.4ms. The GD25S512MDYIGR is utilized across various industries including industrial automation, consumer electronics, and automotive systems where reliable data storage is critical.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:%20Limited&mpn=GD25S512MDYIGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 512Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NOR |
| Clock Frequency | 104 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-WSON (6x8) |
| Write Cycle Time - Word, Page | 50µs, 2.4ms |
| Memory Interface | SPI - Quad I/O |
| Memory Organization | 64M x 8 |
| Programmable | Not Verified |
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