GD25Q80ESIGR
IC FLASH 8MBIT SPI/QUAD 8SOPManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
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GigaDevice Semiconductor (HK) Limited GD25Q80ESIGR is a high-performance 8Mbit NOR Flash memory device. This component offers a versatile SPI interface, supporting Quad I/O for enhanced data throughput, with a maximum clock frequency of 133 MHz. Featuring an access time of 7 ns and a page write time of 2 ms, it is well-suited for applications demanding rapid read and write operations. The memory organization is 1M x 8, providing 8Mbit of non-volatile storage. Operating from a 2.7V to 3.6V supply, this device is designed for operation within an industrial temperature range of -40°C to 85°C. The GD25Q80ESIGR is supplied in an 8-SOP (Small Outline Package) with surface mount technology, specifically an 8-SOIC (0.209", 5.30mm Width) package, presented in Tape & Reel (TR) packaging. This memory solution finds application in various industrial, consumer electronics, and communication systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:%20Limited&mpn=GD25Q80ESIGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.209"", 5.30mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 8Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NOR |
| Clock Frequency | 133 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-SOP |
| Write Cycle Time - Word, Page | 70µs, 2ms |
| Memory Interface | SPI - Quad I/O |
| Access Time | 7 ns |
| Memory Organization | 1M x 8 |
| Programmable | Not Verified |
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