GD25Q80EEIGR
IC FLASH 8MBIT SPI/QUAD 8USONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
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GigaDevice Semiconductor (HK) Limited's GD25Q80EEIGR is an 8Mbit NOR Flash memory device featuring a Quad SPI interface. This non-volatile memory offers a clock frequency of up to 133 MHz and an access time of 7 ns, enabling high-speed data transfer. The memory organization is 1M x 8 bits. Designed for surface mounting, it is supplied in a compact 8-USON (2x3) package, commonly found in industrial and consumer electronics applications. Operating over a voltage range of 2.7V to 3.6V, the GD25Q80EEIGR supports a temperature range of -40°C to 85°C. Write cycle times for word and page operations are 70µs and 2ms, respectively. This component is delivered in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:%20Limited&mpn=GD25Q80EEIGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-XFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 8Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NOR |
| Clock Frequency | 133 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-USON (2x3) |
| Write Cycle Time - Word, Page | 70µs, 2ms |
| Memory Interface | SPI - Quad I/O |
| Access Time | 7 ns |
| Memory Organization | 1M x 8 |
| Programmable | Not Verified |
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