GD25Q40EEIGR
IC FLASH 4MBIT SPI/QUAD 8USONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
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GigaDevice Semiconductor (HK) Limited presents the GD25Q40EEIGR, a 4Mbit NOR FLASH memory component from the GD25Q series. This non-volatile memory utilizes SPI Quad I/O for high-speed data transfer, achieving a clock frequency of 133 MHz and an access time of 7 ns. The memory is organized as 512K x 8 and supports a supply voltage range of 2.7V to 3.6V. Featuring a write cycle time of 70µs for word and 2ms for page operations, this component is suitable for surface mount applications with its 8-USON (3x2) package. The GD25Q40EEIGR operates within an industrial temperature range of -40°C to 85°C and is supplied on tape and reel (TR). Its robust architecture makes it a viable option for applications in industrial control, automotive, and consumer electronics.
Additional Information
Series: GD25QRoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:%20Limited&mpn=GD25Q40EEIGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-XFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 4Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 133 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-USON (3x2) |
| Write Cycle Time - Word, Page | 70µs, 2ms |
| Memory Interface | SPI - Quad I/O |
| Access Time | 7 ns |
| Memory Organization | 512K x 8 |
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