GD25Q20EEIGR
IC FLASH 2MBIT SPI/QUAD 8USONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
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GigaDevice Semiconductor (HK) Limited's GD25Q20EEIGR is a 2Mbit NOR FLASH memory device from the GD25Q series. This component features a Quad SPI interface capable of operating at clock frequencies up to 133 MHz, offering a programming voltage range of 2.7V to 3.6V. With an access time of 7 ns and page write cycle times of 70µs, it is designed for applications requiring rapid data access and efficient write operations. The memory is organized as 256K x 8 and utilizes SLC technology. Packaged in an 8-USON (3x2) footprint for surface mounting, the GD25Q20EEIGR operates within an industrial temperature range of -40°C to 85°C. This device is suitable for use in consumer electronics, industrial control systems, and telecommunications equipment.
Additional Information
Series: GD25QRoHS Status: RoHS CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:%20Limited&mpn=GD25Q20EEIGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-XFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 2Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 133 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-USON (3x2) |
| Write Cycle Time - Word, Page | 70µs, 2ms |
| Memory Interface | SPI - Quad I/O |
| Access Time | 7 ns |
| Memory Organization | 256K x 8 |
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