GD25Q16ENEGR
IC FLASH 16MBIT SPI/QUAD 8USONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
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GigaDevice Semiconductor (HK) Limited's GD25Q16ENEGR is a 16Mbit NOR FLASH memory device from the GD25Q series. This component offers a high clock frequency of 133 MHz and a rapid access time of 7 ns, supporting Quad SPI interface for enhanced data throughput. Designed for robust operation, it features a wide operating temperature range of -40°C to 125°C and a supply voltage from 2.7V to 3.6V. The memory is organized as 2M x 8 and employs SLC (Single-Level Cell) technology. Packaged in an 8-USON (3x4) footprint suitable for surface mounting, this device is utilized in applications across industrial, automotive, and consumer electronics sectors requiring non-volatile data storage.
Additional Information
Series: GD25QRoHS Status: RoHS CompliantManufacturer Lead Time: 14 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:%20Limited&mpn=GD25Q16ENEGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 16Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 133 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-USON (3x4) |
| Write Cycle Time - Word, Page | 140µs, 4ms |
| Memory Interface | SPI - Quad I/O |
| Access Time | 7 ns |
| Memory Organization | 2M x 8 |
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