GD25Q16EEIGR
IC FLASH 16MBIT SPI/QUAD 8USONManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
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GigaDevice Semiconductor (HK) Limited's GD25Q16EEIGR is a 16Mbit Non-Volatile FLASH NOR memory device. This component features an SPI Quad I/O interface, capable of achieving a clock frequency of 133 MHz with an access time of 7 ns. The memory is organized as 2M x 8 and operates within a voltage range of 2.7V to 3.6V. The GD25Q16EEIGR is housed in an 8-USON (2x3) package, suitable for surface mount applications. It supports a write cycle time of 70µs for word programming and 2ms for page programming. This memory solution is designed for demanding applications across automotive, industrial, and consumer electronics sectors. The operating temperature range is -40°C to 85°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:%20Limited&mpn=GD25Q16EEIGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-XFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Memory Size | 16Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Voltage - Supply | 2.7V ~ 3.6V |
| Technology | FLASH - NOR |
| Clock Frequency | 133 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-USON (2x3) |
| Write Cycle Time - Word, Page | 70µs, 2ms |
| Memory Interface | SPI - Quad I/O |
| Access Time | 7 ns |
| Memory Organization | 2M x 8 |
| Programmable | Not Verified |
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