GD25LQ80ETJGR
IC FLASH 8MBIT SPI/QUAD 8SOPManufacturer: GigaDevice Semiconductor (HK) Limited
Categories: Memory
Quality Control: Learn More
GigaDevice Semiconductor (HK) Limited's GD25LQ80ETJGR is a high-performance 8-Mbit NOR Flash memory device featuring SPI and Quad I/O (QPI) interfaces. This component offers a clock frequency of up to 133 MHz and an access time of 6 ns, enabling rapid data retrieval. The memory is organized as 1M x 8 bits and operates within a voltage range of 1.65V to 2V. Designed for surface mounting, it comes in an 8-SOP package with dimensions of 0.154" (3.90mm) width, supplied on a Tape & Reel (TR). The GD25LQ80ETJGR boasts a write cycle time of 60µs for words and 2.4ms for pages, with an operating temperature range of -40°C to 105°C. Its robust NOR Flash technology is suitable for applications in consumer electronics, industrial control systems, and automotive electronics.
Additional Information
Series: GD25LQRoHS Status: RoHS CompliantManufacturer Lead Time: 14 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:%20Limited&mpn=GD25LQ80ETJGR&lbl=1&lbc=000000&q3=1)
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Memory Size | 8Mbit |
| Memory Type | Non-Volatile |
| Operating Temperature | -40°C ~ 105°C (TA) |
| Voltage - Supply | 1.65V ~ 2V |
| Technology | FLASH - NOR (SLC) |
| Clock Frequency | 133 MHz |
| Memory Format | FLASH |
| Supplier Device Package | 8-SOP |
| Grade | - |
| Write Cycle Time - Word, Page | 60µs, 2.4ms |
| Memory Interface | SPI - Quad I/O, QPI |
| Access Time | 6 ns |
| Memory Organization | 1M x 8 |
| Qualification | - |
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